Hi. In a bipolar transistor, VCE, being saturated, should it have a value near 0.7v (like live diodes) or other voltage? I was simulating in proteus, isis, a circuit that uses npn's BD433 and it gives me that tension. In the component datasheet there is a VCE (sat) graph based on Ic and at 2A that voltage should be 0.2v. It turns out that in the datasheet, vce (sat) also says: Typ 0.2v Max 0.7v Will the simulator have the maximum voltage 0.7 charged instead of VCE (sat) based on Ic? Or is there something I did not understand?

Here you have a curve of this transistor given by a manufacturer, -for your device in particular-. Considers that a logarithmic scale is being used, the transistor can handle up to 4 [A], therefore, for 2 [A] the Vsat is in the order of 200 [mV].

Diego. Regarding the first paragraph of your question. Indeed, the direct voltage VF at the PN junction of a silicon diode is approximately 0.7 volts. The transistors are composed of two junctions or diodes, BE and BC, the collector-emitter is NOT a diode, therefore the saturation voltage VCE (sat) can be 0.2 and when the current rises the voltage rises according to the manufacturer's instructions.