http://www.datasheet.es/PDF/925067/EN4070-pdf.html Bipolar Electrostatic Induction Transistor The EN4070 is a bipolar electrostatic induction transistor. An epitaxial planar design is used. Ion implantation and rear multilayer metallization process. Maximum 7A current ● It has a negative temperature characteristic. Under high current, the rate of change of amplification temperature is negative. ● Good frequency characteristics and fast switching speed. ● High temperature performance. ● The safe work area is large and has a strong anti-burning ability. ● Can be used in parallel ● Package form: TO-220AB. Drain source voltage VDS0 400 V Voltage VDG0 650 V Source-gate voltage VSG0 5 V Drain the current ID 7 A Ta = 25 ° C 2 Dissipated power Tc = 25 ° C Ptot 80 W Junction temperature Tj 150 ° C Storage temperature Tstg -55 ～ 150 ° C a 600V 7A Mosfet can be the replacement Saturation voltage of the drain source VDS sat ID = 3A, IG = 0.8A 1.5 V Gate source saturation voltage VGS sat ID = 3A, IG = 0.8A 1.2 V Fall time tf 0.5 μs